Datasheet Details
| Part number | PTFA211001E |
|---|---|
| Manufacturer | Infineon |
| File Size | 213.18 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTFA211001E Datasheet
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General Description
The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications.
It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.
Thermally-enhanced packaging provides the coolest operation available.
Key Features
- Thermally-enhanced package, Pb-free and RoHScompliant.
- Broadband internal matching.
- Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 23 W - Linear Gain = 16 dB - Efficiency = 28.5% - Intermodulation distortion =.
- 37 dBc - Adjacent channel power =.
- 41 dBc.
- Typical CW performance, 2170 MHz, 28 V - Output power at P.
- 1dB = 125 W - Efficiency = 57%.
- Integrated ESD protection: Human Body Model, Class.