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PTFA211001E

PTFA211001E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
PTFA211001E datasheet preview

PTFA211001E Details

Part number PTFA211001E
Datasheet PTFA211001E Datasheet PDF (Download)
File Size 213.18 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA211001E page 2 PTFA211001E page 3

PTFA211001E Overview

The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available.

PTFA211001E Key Features

  • Thermally-enhanced package, Pb-free and RoHSpliant
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V
  • Average output power = 23 W
  • Linear Gain = 16 dB
  • Efficiency = 28.5%
  • Intermodulation distortion = -37 dBc
  • Adjacent channel power = -41 dBc
  • Typical CW performance, 2170 MHz, 28 V
  • Output power at P-1dB = 125 W

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