PTFA211001E Datasheet (Infineon)

Part PTFA211001E
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 213.18 KB
Pricing from 13.9355 USD, available from SHENGYU ELECTRONICS.
Infineon

PTFA211001E Overview

Key Specifications

Max Operating Temp: 200 °C

Description

The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Key Features

  • Thermally-enhanced package, Pb-free and RoHScompliant
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 28 V
  • Average output power = 23 W
  • Linear Gain = 16 dB

Price & Availability

Seller Inventory Price Breaks Buy
SHENGYU ELECTRONICS 3959 1+ : 13.9355 USD
10+ : 13.6568 USD
100+ : 13.24 USD
1000+ : 12.82 USD
View Offer