Datasheet Summary
Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110
- 2170 MHz
Description
The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
PTFA211001E Package H-30248-2
IM3 (dBc), ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, 8 dB P/A R, 10 MHz carrier spacing
-28 -31 -34 -37 -40 -43 -46 -49 -52 -55
IM3 Up
Ef f...