PTFA211001E Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170.

Datasheet Details

Part number	PTFA211001E
Manufacturer	Infineon
File Size	213.18 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA211001E-Infineon.pdf

The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications.

It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Thermally-enhanced package, Pb-free and RoHScompliant.
Broadband internal matching.
Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 23 W - Linear Gain = 16 dB - Efficiency = 28.5% - Intermodulation distortion =.
37 dBc - Adjacent channel power =.
41 dBc.
Typical CW performance, 2170 MHz, 28 V - Output power at P.
1dB = 125 W - Efficiency = 57%.
Integrated ESD protection: Human Body Model, Class.

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