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PTFA212401F Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: Infineon

Download the PTFA212401F datasheet PDF. This datasheet also includes the PTFA212401E variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (PTFA212401E-Infineon.pdf) that lists specifications for multiple related part numbers.

General Description

The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

Overview

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170.

Key Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 PTFA212401E PTFA212401F Adjacent Channel Power Ratio (dB) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.

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