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PTFA212401F

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA212401F datasheet preview

Datasheet Details

Part number PTFA212401F
Datasheet PTFA212401F PTFA212401E Datasheet (PDF)
File Size 483.04 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA212401F page 2 PTFA212401F page 3

PTFA212401F Overview

The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

PTFA212401F Key Features

  • 35 ACPR Up
  • 45 ACPR Low
  • Thermally-enhanced packages, Pb-free and RoHS pliant
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8 dB
  • Average output power = 47.0 dBm
  • Linear Gain = 15.8 dB
  • Efficiency = 28%
  • Intermodulation distortion = -35 dBc
  • Adjacent channel power = -40 dBc
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PTFA212401F Distributor

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