• Part: PTFA212401F
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 483.04 KB
Download PTFA212401F Datasheet PDF
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Datasheet Summary

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 - 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 PTFA212401E PTFA212401F Adjacent Channel Power Ratio (dB) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD...