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PTFA212401F - Thermally-Enhanced High Power RF LDMOS FET

This page provides the datasheet information for the PTFA212401F, a member of the PTFA212401E Thermally-Enhanced High Power RF LDMOS FET family.

Datasheet Summary

Description

The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 PTFA212401E PTFA212401F Adjacent Channel Power Ratio (dB) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.

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Datasheet preview – PTFA212401F

Datasheet Details

Part number PTFA212401F
Manufacturer Infineon
File Size 483.04 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA212401F Datasheet
Additional preview pages of the PTFA212401F datasheet.

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Full PDF Text Transcription

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Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 PTFA212401E PTFA212401F Adjacent Channel Power Ratio (dB) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.
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