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PTFA220041M

PTFA220041M is High Power RF LDMOS Field Effect Transistor manufactured by Infineon.
PTFA220041M datasheet preview

PTFA220041M Details

Part number PTFA220041M
Datasheet PTFA220041M Datasheet PDF (Download)
File Size 323.98 KB
Manufacturer Infineon
Description High Power RF LDMOS Field Effect Transistor
PTFA220041M page 2 PTFA220041M page 3

PTFA220041M Overview

The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package.

PTFA220041M Key Features

  • Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR
  • POUT = 27 dBm Avg
  • ACPR = -44 dBc
  • Typical CW performance, 1842 MHz, 28 V
  • POUT = 37 dBm
  • Efficiency = 53.5%
  • Gain = 17.9 dB
  • Typical CW performance, 940 MHz, 28 V
  • POUT = 37.5 dBm
  • Efficiency = 57%

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