PTFA220041M - High Power RF LDMOS Field Effect Transistor

Product Overview

Infineon

Part number	PTFA220041M
Manufacturer	Infineon
File Size	323.98 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFA220041M Datasheet
Additional preview pages of the PTFA220041M datasheet.

The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range.

Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR - POUT = 27 dBm Avg - ACPR =.
44 dBc.
Typical CW performance, 1842 MHz, 28 V - POUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB.
Typical CW performance, 940 MHz, 28 V - POUT = 37.5 dBm - Efficiency = 57% - Gain = 19.7 dB.
Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power.
In.

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Published: Feb 21, 2016 |