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PTFA220081M Datasheet High Power Rf Ldmos Field Effect Transistor

Manufacturer: Infineon

Overview: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200.

Datasheet Details

Part number PTFA220081M
Manufacturer Infineon
File Size 734.80 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet PTFA220081M-Infineon.pdf

General Description

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz.

This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

PTFA220081M Package PG-SON-10 IMD (dBc) Efficiency (%) Two-tone Drive-up VDD = 28 V, IDQ = 100 mA, ƒ1 = 939.5 M Hz, ƒ2 = 940.5 M Hz -10 -20 Efficiency 50 40 -30 30 IMD 3rd -40 20 -50 IMD 5th 10 -60 34 35 36 37 38 39 40 Output Power, PEP (dBm) 0 41

Key Features

  • Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR =.
  • 40 dBc.
  • Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB.
  • Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency = 50% - Gain = 15 dB.
  • Capable of handling 10:1 VSWR @ 28 V, 8 W (CW) output power.
  • Integrated ESD protection : Human Body Model, Class 2 (minimum).
  • Excellent thermal stability.
  • P.

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PTFA220081M Distributor