PTFA220081M Overview
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.
PTFA220081M Key Features
- Typical two-carrier WCDMA performance, 8 dB PAR
- POUT = 33 dBm Avg
- ACPR = -40 dBc
- Typical CW performance, 940 MHz, 28 V
- POUT = 40 dBm
- Efficiency = 59%
- Gain = 20 dB
- Typical CW performance, 2140 MHz, 28 V
- POUT = 40 dBm
- Efficiency = 50%