PTFA220081M Datasheet (Infineon)

Part PTFA220081M
Description High Power RF LDMOS Field Effect Transistor
Category Transistor
Manufacturer Infineon
Size 734.80 KB
Available from Win Source.
Infineon

PTFA220081M Overview

Key Specifications

Mount Type: Surface Mount
Pins: 10
Operating Voltage: 28 V
Max Frequency: 2.2 GHz

Description

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

Key Features

  • Typical two-carrier WCDMA performance, 8 dB PAR
  • POUT = 33 dBm Avg
  • ACPR = –40 dBc
  • Typical CW performance, 940 MHz, 28 V
  • POUT = 40 dBm

Price & Availability

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