Datasheet Summary
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor 8 W, 700
- 2200 MHz
Description
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.
PTFA220081M Package PG-SON-10
IMD (dBc) Efficiency (%)
Two-tone Drive-up
VDD = 28 V, IDQ = 100 mA, ƒ1 = 939.5 M Hz, ƒ2 = 940.5 M Hz
-10
-20 Efficiency
50 40
-30 30
IMD 3rd
-40 20
-50
IMD 5th
-60 34
35 36 37 38 39 40
Output Power, PEP (dBm)
0 41
Features
- Typical two-carrier WCDMA performance,...