PTFA220081M - High Power RF LDMOS Field Effect Transistor

Product Overview

Infineon

Part number	PTFA220081M
Manufacturer	Infineon
File Size	734.80 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFA220081M Datasheet
Additional preview pages of the PTFA220081M datasheet.

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz.

This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR =.
40 dBc.
Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB.
Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency = 50% - Gain = 15 dB.
Capable of handling 10:1 VSWR @ 28 V, 8 W (CW) output power.
Integrated ESD protection : Human Body Model, Class 2 (minimum).
Excellent thermal stability.
P.

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Published: Feb 21, 2016 |