PTFA240451E Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: Infineon

Datasheet Details

Part number	PTFA240451E
Manufacturer	Infineon
File Size	186.72 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Download	PTFA240451E Download (PDF)

The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS® FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Full gold metallization ensures excellent device lifetime and reliability.

PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480.

Thermally-enhanced, lead-free and RoHS-compliant packaging.
Broadband internal matching.
Typical two-carrier CDMA performance at 2450 MHz, 28 V - Average output power = 10 W - Linear Gain = 14 dB - Efficiency = 27% - Adjacent channel power =.
45 dBc.
Typical CW performance, 2450 MHz, 28 V - Output power at P.
1dB = 50 W - Efficiency = 54%.
Integrated ESD protection: Human Body Model, Class 2 (minimum).
Excellent thermal stabil.

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