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PTFA260451E - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS ® FET intended for CDMA2000, Super3G (3GPP TSG RAN), and WiMAX applications from 2.62 to 2.68 GHz.

Thermallyenhanced packaging provide the coolest operation available.

Features

  • Lead-free, RoHS-compliant and thermallyenhanced packaging.
  • Internal matching for wideband performance.
  • Typical three-carrier CDMA2000 performance - Average output power = 10 W - Gain = 14 dB - Efficiency = 24% - ACPR =.
  • 52 dBc.
  • Typical CW performance - Output power at P.
  • 1dB = 50 W - Efficiency = 46%.
  • Integrated ESD protection: Human Body Model, Class 2 (minimum).
  • Excellent thermal stability.
  • Low HCI Drift.
  • C.

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Datasheet Details

Part number PTFA260451E
Manufacturer Infineon
File Size 215.35 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA260451E Datasheet
Additional preview pages of the PTFA260451E datasheet.

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Full PDF Text Transcription

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PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS ® FET intended for CDMA2000, Super3G (3GPP TSG RAN), and WiMAX applications from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA260451E Package H-30265-2 Drain Efficiency (%) Adj. Ch. Power Ratio (dBc) 3-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 500 mA, ƒ = 2680 MHz 60 -40 50 Alt_1 2.5 MHz 40 Adj 2.135 MHz 30 -45 -50 -55 20 -60 10 Efficiency -65 0 -70 25 30 35 40 45 50 Output Power, Avg.
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