Datasheet4U Logo Datasheet4U.com
Infineon logo

PTFA260851F Datasheet

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA260851F datasheet preview

Datasheet Details

Part number PTFA260851F
Datasheet PTFA260851F PTFA260851E Datasheet (PDF)
File Size 387.34 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA260851F page 2 PTFA260851F page 3

PTFA260851F Overview

The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band.

PTFA260851F Key Features

  • Thermally-enhanced, Pb-free and RoHS-pliant packages
  • Broadband internal matching
  • Typical WiMAX performance at 2680 MHz, 28 V
  • Average output power = 16 W
  • Linear Gain = 14 dB
  • Efficiency = 22%
  • Error Vector Magnitude = -29 dB
  • Typical CW performance, 2680 MHz, 28 V
  • Output power at P-1dB = 100 W
  • Efficiency = 47%
Infineon logo - Manufacturer

More Datasheets from Infineon

See all Infineon datasheets

Part Number Description
PTFA260851E Thermally-Enhanced High Power RF LDMOS FET
PTFA260451E Thermally-Enhanced High Power RF LDMOS FET
PTFA261301E Thermally-Enhanced High Power RF LDMOS FET
PTFA261301F Thermally-Enhanced High Power RF LDMOS FET
PTFA261702E Thermally-Enhanced High Power RF LDMOS FET
PTFA210301E Thermally-Enhanced High Power RF LDMOS FET
PTFA210601E Thermally-Enhanced High Power RF LDMOS FET
PTFA210601F Thermally-Enhanced High Power RF LDMOS FET
PTFA210701E Thermally-Enhanced High Power RF LDMOS FET
PTFA210701F Thermally-Enhanced High Power RF LDMOS FET

PTFA260851F Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts