Datasheet4U Logo Datasheet4U.com

PTFA260851F - Thermally-Enhanced High Power RF LDMOS FET

This page provides the datasheet information for the PTFA260851F, a member of the PTFA260851E Thermally-Enhanced High Power RF LDMOS FET family.

Datasheet Summary

Description

The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band.

Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA260851E Package H-30248-2 PTFA260851F Package H-31248-2 Efficiency (%) EVM (dBc) WiMAX EVM and Efficiency vs. Output Power VDS = 28 V, IDQ = 900 mA 25 -20 2.62 20 GHz 2.68 -25 GHz Efficiency 15 2.62 -30 10 -35 EVM 5 -40 0 -45 15 20 25 30 35 40 45 Outp.

📥 Download Datasheet

Datasheet preview – PTFA260851F

Datasheet Details

Part number PTFA260851F
Manufacturer Infineon
File Size 387.34 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA260851F Datasheet
Additional preview pages of the PTFA260851F datasheet.

📁 Similar Datasheet

  • PTFA220121M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
  • PTFA - Plug Type Fixed Attenuator (OPLINK)
  • PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
Other Datasheets by Infineon
  • PTFA260851E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA260451E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA261301E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA261301F - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA261702E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA210601E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA210601F - Thermally-Enhanced High Power RF LDMOS FET

Full PDF Text Transcription

Click to expand full text
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz PTFA260851E PTFA260851F Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA260851E Package H-30248-2 PTFA260851F Package H-31248-2 Efficiency (%) EVM (dBc) WiMAX EVM and Efficiency vs. Output Power VDS = 28 V, IDQ = 900 mA 25 -20 2.62 20 GHz 2.68 -25 GHz Efficiency 15 2.
Published: |