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PTFA261301F Datasheet

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA261301F datasheet preview

Datasheet Details

Part number PTFA261301F
Datasheet PTFA261301F PTFA261301E Datasheet (PDF)
File Size 244.71 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA261301F page 2 PTFA261301F page 3

PTFA261301F Overview

The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS ® FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTFA261301F Key Features

  • Thermally-enhanced, Pb-free packages, RoHS-pliant
  • Broadband internal matching
  • Typical CDMA performance at 2.68 GHz
  • Average output power = 26 W
  • Linear Gain = 13 dB
  • Efficiency = 24%
  • Typical CW performance, 2680 MHz, 28 V
  • Output power at P-1dB = 152 W
  • Efficiency = 47%
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
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PTFA261301F Distributor

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