Datasheet4U Logo Datasheet4U.com

PTFA261301F - Thermally-Enhanced High Power RF LDMOS FET

This page provides the datasheet information for the PTFA261301F, a member of the PTFA261301E Thermally-Enhanced High Power RF LDMOS FET family.

Datasheet Summary

Description

The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS ® FETs intended for ultra-linear applications.

They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz.

Features

  • Thermally-enhanced, Pb-free packages, RoHS-compliant.
  • Broadband internal matching.
  • Typical CDMA performance at 2.68 GHz - Average output power = 26 W - Linear Gain = 13 dB - Efficiency = 24%.
  • Typical CW performance, 2680 MHz, 28 V - Output power at P.
  • 1dB = 152 W - Efficiency = 47%.
  • Integrated ESD protection: Human Body Model, Class 2 (minimum).
  • Excellent thermal stability, low HCI drift.
  • Capable of handling 10:1 VSWR @ 28 V,.

📥 Download Datasheet

Datasheet preview – PTFA261301F

Datasheet Details

Part number PTFA261301F
Manufacturer Infineon
File Size 244.71 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA261301F Datasheet
Additional preview pages of the PTFA261301F datasheet.

📁 Similar Datasheet

  • PTFA220121M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
  • PTFA - Plug Type Fixed Attenuator (OPLINK)
  • PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
Other Datasheets by Infineon
  • PTFA261301E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA261702E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA260451E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA260851E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA260851F - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA210601E - Thermally-Enhanced High Power RF LDMOS FET
  • PTFA210601F - Thermally-Enhanced High Power RF LDMOS FET

Full PDF Text Transcription

Click to expand full text
PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS ® FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz. Full gold metallization ensures excellent device lifetime and reliability. PTFA261301E Package H-30260-2 Adj. Channel Power Ratio (dBc) Drain Efficiency (%) 3-Carrier CDMA2000 Performance at 28 Volts IDQ = 1.4 A, ƒ = 2680 MHz -10 30 Efficiency -20 25 -30 20 -40 Alt2 15 Alt -50 10 -60 ACPR 5 -70 0 0 5 10 15 20 25 30 35 Output Power, avg.
Published: |