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PTFA261702E - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band.

Key Features

  • include input and output matching, and thermally-enhanced package with slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Efficiency (%) EVM (dBc) WiMAX Performance VDD = 28 V, IDQ = 1800 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 30 -15 Efficiency 25 EVM: ƒ = 2.62 GHz 20 EVM: ƒ = 2.68 GHz EVM: ƒ = 2.65 GHz 15 -20 -25 -30 10 -35 5 -40 0 20 25 30 35 40 45 Outp.

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Datasheet Details

Part number PTFA261702E
Manufacturer Infineon
File Size 359.92 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA261702E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced package with slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Efficiency (%) EVM (dBc) WiMAX Performance VDD = 28 V, IDQ = 1800 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 30 -15 Efficiency 25 EVM: ƒ = 2.62 GHz 20 EVM: ƒ = 2.68 GHz EVM: ƒ = 2.