PTFB091507FH
PTFB091507FH is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920
- 960 MHz
Description
The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB091507FH Package H-34288-4/2
Gain (dB) Drain Efficiency (%)
Power Sweep, CW
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
Gain
18.0 41
Efficiency
43 45 47 49 51
Output Power (dBm)
70 60...
