PTFB091802FC Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960.

Datasheet Details

Part number	PTFB091802FC
Manufacturer	Infineon
File Size	352.65 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFB091802FC-Infineon.pdf

The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band.

include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091802FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz 3GPP WCDMA signal, PAR = 10.0 dB, 3.84 MHz BW 24 Gain 20 60 40 16 Efficiency 12 20 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25 -60ptfb091802fc_g1 30 3.

Part Number	Description
PTFB091507FH	Thermally-Enhanced High Power RF LDMOS FET
PTFB090901EA	Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA	Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA	Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA	Thermally-Enhanced High Power RF LDMOS FET
PTFB093608SV	Thermally-Enhanced High Power RF LDMOS FET
PTFB183404E	High Power RF LDMOS Field Effect Transistors
PTFB183404F	High Power RF LDMOS Field Effect Transistors
PTFB193404F	Thermally-Enhanced High Power RF LDMOS FETs
PTFB201402FC	High Power RF LDMOS Field Effect Transistor