PTFB091802FC
PTFB091802FC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920
- 960 MHz
Description
The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band. Features include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB091802FC Package H-37248-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz 3GPP WCDMA signal,
PAR = 10.0 dB, 3.84 MHz BW
Gain
60 40
16 Efficiency 12
20 0
8 PAR @ 0.01% CCDF 4
-20...
