PTFB091802FC Datasheet (Infineon)

Part PTFB091802FC
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 352.65 KB
Infineon

PTFB091802FC Overview

Key Specifications

Description

The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band. Features include high gain and a thermally-enhanced package with earless flange.

Key Features

  • Broadband internal input and output matching
  • Dual path design (2 X 90 W)
  • Typical CW performance at 960 MHz, 28 V
  • Ouput power @ P1dB = 206 W
  • Efficiency = 56%

Price & Availability

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