PTFB091802FC - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Part number	PTFB091802FC
Manufacturer	Infineon
File Size	352.65 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFB091802FC Datasheet
Additional preview pages of the PTFB091802FC datasheet.

The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band.

include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091802FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz 3GPP WCDMA signal, PAR = 10.0 dB, 3.84 MHz BW 24 Gain 20 60 40 16 Efficiency 12 20 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25 -60ptfb091802fc_g1 30 3.

📁 Similar Datasheet

PTFB182503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB182503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB183408SV - High Power RF LDMOS Field Effect Transistor (Infineon Technologies)
PTFB191501E - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB191501F - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB192503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB201402FC - High Power RF LDMOS Field Effect Transistor (Wolfspeed)

Other Datasheets by Infineon

Published: Jan 26, 2016 |