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PTFB093608SV - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB093608SV Package H-37275G-6/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive Up VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 21.0 60 20.5 50 20.0 Gain 19.5 40 30 19.0 20 18.5 18.0 35 Efficie.

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Datasheet Details

Part number PTFB093608SV
Manufacturer Infineon
File Size 563.21 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFB093608SV Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB093608SV Package H-37275G-6/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive Up VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 21.0 60 20.5 50 20.0 Gain 19.5 40 30 19.0 20 18.5 18.0 35 Efficiency 40 45 50 Output Power Avg.