Description
The PTFB193404F is a 340‑watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.
Features
- include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB193404F Package H-37275-6/2
IMD, ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-20 -25 -30 -35 -40 -45 -50 -55 -60
36
40
Efficiency
35 3.
PTFB193404F Datasheet
