Datasheet Details
| Part number | PTFB201402FC |
|---|---|
| Manufacturer | Infineon |
| File Size | 412.16 KB |
| Description | High Power RF LDMOS Field Effect Transistor |
| Datasheet | PTFB201402FC-Infineon.pdf |
|
|
Overview: PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025.
| Part number | PTFB201402FC |
|---|---|
| Manufacturer | Infineon |
| File Size | 412.16 KB |
| Description | High Power RF LDMOS Field Effect Transistor |
| Datasheet | PTFB201402FC-Infineon.pdf |
|
|
|
The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package.
It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band.
Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
PTFB201402FC | High Power RF LDMOS Field Effect Transistor | Wolfspeed |
| Part Number | Description |
|---|---|
| PTFB210801FA | Thermally-Enhanced High Power RF LDMOS FET |
| PTFB211501E | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211501F | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211503EL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211503FL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211803EL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211803FL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB212503EL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB212503FL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB212507SH | Thermally-Enhanced High Power RF LDMOS FET |