Datasheet4U Logo Datasheet4U.com

PTFB210801FA Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170.

General Description

The PTFB210801FA LDMOS FET is designed for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB210801FA Package H-37265-2 ACPR (dBc) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 2140 MHz, 10 MHz Spacing, 8dB PAR -15 Adj Lower -20 Adj Upper -25 Alt -30 Efficiency -35 -40 -45 45 40 35 30 25 20 15 10 -50 5 36 37 38 39 40 41 42 43.

More Datasheets from Infineon

Part Number Description
PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET
PTFB213004F High Power RF LDMOS Field Effect Transistor

PTFB210801FA Distributor