• Part: PTFB210801FA
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 468.56 KB
PTFB210801FA Datasheet (PDF) Download
Infineon
PTFB210801FA

Description

The PTFB210801FA LDMOS FET is designed for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages with earless flanges.

Key Features

  • Broadband internal matching
  • Typical single-carrier WCDMA performance at 2170 MHz, 28 V - Average output power = 25 W - Linear Gain = 18.5 dB - Efficiency = 32.5% - Adjacent channel power = -3