Description
The PTFB210801FA LDMOS FET is designed for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Features
- include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB210801FA Package H-37265-2
ACPR (dBc) Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA,
ƒ = 2140 MHz, 10 MHz Spacing, 8dB PAR
-15 Adj Lower
-20 Adj Upper
-25 Alt -30 Efficiency
-35
-40
-45
45 40 35 30 25 20 15 10
-50 5 36 37 38 39 40 41 42 43.
PTFB210801FA Datasheet
