PTFB212503EL - Thermally-Enhanced High Power RF LDMOS FETs
Infineon
General Description
The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Key Features
include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB212503EL Package H-33288-6
PTFB212503FL Package H-34288-4/2
IMD (dBc) Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz,
3GPP signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-15
-20 ACPR IMD.
Full PDF Text Transcription for PTFB212503EL (Reference)
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PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intende...
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tion The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB212503EL Package H-33288-6 PTFB212503FL Package H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz, 3GPP signal, PAR = 8 dB, 1
PTFB212503EL Datasheet
