| Part number | PTFB212507SH |
|---|---|
| Datasheet | PTFB212507SH-Infineon.pdf |
| File Size | 189.71 KB |
| Manufacturer | Infineon |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
|
|
The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
| Part Number | Description |
|---|---|
| PTFB212503EL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB212503FL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB210801FA | Thermally-Enhanced High Power RF LDMOS FET |
| PTFB211501E | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211501F | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211503EL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211503FL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211803EL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211803FL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB213004F | High Power RF LDMOS Field Effect Transistor |
