PTFB212507SH Key Features
- 15 -20 IMD Low -25 IMD Up -30 Efficiency
- Broadband internal matching
- Wide video bandwidth
- Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 3GPP signal, PAR = 8 dB, 10 MHz carrier spacing
- Part: PTFB212507SH
- Description: Thermally-Enhanced High Power RF LDMOS FET
- Manufacturer: Infineon
- Size: 189.71 KB
Related Infineon Datasheets
| Part Number | Description |
|---|---|
| PTFB212503EL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB212503FL | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB210801FA | Thermally-Enhanced High Power RF LDMOS FET |
| PTFB211501E | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFB211501F | Thermally-Enhanced High Power RF LDMOS FETs |