• Part: PTFB213004F
  • Description: High Power RF LDMOS Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 395.40 KB
PTFB213004F Datasheet (PDF) Download
Infineon
PTFB213004F

Description

The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package.

Key Features

  • 84 MHz bandwidth -10 50 -20 40 Efficiency -30 30 -40 ACP low -50 -60 34 ACP up