Datasheet Details
| Part number | PTFB213004F |
|---|---|
| Manufacturer | Infineon |
| File Size | 395.40 KB |
| Description | High Power RF LDMOS Field Effect Transistor |
| Datasheet |
 PTFB213004F Datasheet
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General Description
The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band.
Key Features
- include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz bandwidth -10 50 -20 40 Efficiency -30 30 -40 ACP low -50 -60 34 ACP up 38 42 46 50 Output Power, avg. (dBm) 20 10 0 54 Features.
- Broadband internal matching.
- Enhanced for use.