PTFB213208FV - Thermally-Enhanced High Power RF LDMOS FET
Infineon
General Description
The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Key Features
include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB213208FV Package H-34275G-6/2
IMD3, ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 2.7 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-25 35
-30
IMD Up -35
30 25
-40 IMD Low
-45
-50
-55
20.
Full PDF Text Transcription for PTFB213208FV (Reference)
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PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-wat...
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320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB213208FV Package H-34275G-6/2 IMD3, ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 2.7 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW =
PTFB213208FV Datasheet
