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PTFC260202FC - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band.

Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Key Features

  • Broadband input matching.
  • Typical CW performance, 2620 MHz, 28 V - Output power at P1dB = 25 W - Efficiency = 57% - Linear Gain = 19.4 dB.
  • Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power.
  • Integrated ESD protection.
  • Human Body Model Class 1B (per ANSI/ESDA.

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Datasheet Details

Part number PTFC260202FC
Manufacturer Infineon
File Size 305.74 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFC260202FC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC260202FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.