PTFC260202FC - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Datasheet Details

Part number	PTFC260202FC
Manufacturer	Infineon
File Size	305.74 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFC260202FC Datasheet
Additional preview pages of the PTFC260202FC datasheet.

Product details

Description

The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band.

Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

Broadband input matching.
Typical CW performance, 2620 MHz, 28 V - Output power at P1dB = 25 W - Efficiency = 57% - Linear Gain = 19.4 dB.
Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power.
Integrated ESD protection.
Human Body Model Class 1B (per ANSI/ESDA.

📁 Similar Datasheet

PTFC261402FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PTFC210202FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PTFC270101M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
PTFC101C1G0 - Platinum Temperature Sensors (TE)
PTF - Metal Film Resistors (Vishay)
PTF080101 - LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ (Infineon Technologies AG)
PTF080101S - LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ (Infineon Technologies AG)
PTF080451 - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz (Infineon Technologies AG)

Other Datasheets by Infineon

PTFC261402FC - Thermally-Enhanced High Power RF LDMOS FET
PTFC262157FH - Thermally-Enhanced High Power RF LDMOS FET
PTFC262808SV - Thermally-Enhanced High Power RF LDMOS FET
PTFC210202FC - Thermally-Enhanced High Power RF LDMOS FET
PTFC270051M - High Power RF LDMOS Field Effect Transistor
PTFC270101M - High Power RF LDMOS Field Effect Transistor

Published: Nov 27, 2016 |