Datasheet4U Logo Datasheet4U.com

PTFC261402FC Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

General Description

The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC261402FC Package H-37248-4 Peak/Average (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 7.5 dB PAR, 3.84 MHz BW 24 60 Efficiency 20 Gain 40 16 20 12 PAR @ 0.01% CCDF 8 0 -20 4 -40 0 33 38 4.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Wolfspeed Logo PTFC261402FC Thermally-Enhanced High Power RF LDMOS FET Wolfspeed

More Datasheets from Infineon

Part Number Description
PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET
PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET
PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET
PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET
PTFC270051M High Power RF LDMOS Field Effect Transistor
PTFC270101M High Power RF LDMOS Field Effect Transistor
PTFA041501E Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501HL Thermally-Enhanced High Power RF LDMOS FETs

PTFC261402FC Distributor