Datasheet Summary
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620
- 2690 MHz
Description
The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFC262808SV Package H-37275G-6/2 with formed leads
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
19 40
18...