• Part: PTFC270051M
  • Description: High Power RF LDMOS Field Effect Transistor
  • Manufacturer: Infineon
  • Size: 284.20 KB
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Datasheet Summary

High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 - 2700 MHz Description The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFC270051M Package PG-SON-10 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW Gain 21 60 50 20 40 19 30 18 Efficiency 17 2110 MHz 2140 MHz 2170 MHz 20 10 16 c270051m-gr1.3 22 24 26 28 30 32 34 36 38 40 Output Power (dBm) Features -...