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PTFC270051M Datasheet High Power Rf Ldmos Field Effect Transistor

Manufacturer: Infineon

Overview: PTFC270051M High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700.

Datasheet Details

Part number PTFC270051M
Manufacturer Infineon
File Size 284.20 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet PTFC270051M-Infineon.pdf

General Description

The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz.

This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

PTFC270051M Package PG-SON-10 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 22 Gain 21 60 50 20 40 19 30 18 Efficiency 17 2110 MHz 2140 MHz 2170 MHz 20 10 16 c270051m-gr1.3 0 22 24 26 28 30 32 34 36 38 40 Output Power (dBm)

Key Features

  • Unmatched.
  • Typical CW performance, 940 MHz, 28 V - Output power (P1dB) = 6.5 W - Gain = 23 dB - Efficiency = 62%.
  • Typical CW performance, 2170 MHz, 28 V - Output power (P1dB) = 7.3 W - Gain = 20.3 dB - Efficiency = 60%.
  • Typical CW performance, 2655 MHz, 28 V - Output power (P1dB).

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