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PTFC270101M - High Power RF LDMOS Field Effect Transistor

General Description

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz.

This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

Key Features

  • Unmatched input and output.
  • Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efficiency = 60%.
  • Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR =.
  • 44.9 dBc @ 5.

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Datasheet Details

Part number PTFC270101M
Manufacturer Infineon
File Size 401.56 KB
Description High Power RF LDMOS Field Effect Transistor
Datasheet download datasheet PTFC270101M Datasheet

Full PDF Text Transcription (Reference)

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PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Description The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFC270101M Package PG-SON-10 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth 23 70 22 Gain 21 60 50 20 40 19 30 18 20 Efficiency 17 10 16 c270101m-2.