PTRA093302FC - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Datasheet Details

Part number	PTRA093302FC
Manufacturer	Infineon
File Size	158.68 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTRA093302FC Datasheet
Additional preview pages of the PTRA093302FC datasheet.

Product details

Description

The PTRA093302FC is a 330-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power ampliﬁer applications in the 746 MHz to 768 MHz frequency band.

Features

include dual-path design, input matching, high gain and thermally-enhanced package with earless ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTRA093302FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 400 mA, ƒ = 768 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25.

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Published: Nov 27, 2016 |