PTVA030121EA Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450.

Datasheet Details

Part number	PTVA030121EA
Manufacturer	Infineon
File Size	313.61 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA030121EA-Infineon.pdf

The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band.

include high gain and a thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA030121EA Package H-36265-2 Gain (dB) Drain Efficiency (%) CW Power Sweep VDD = 50 V, IDQ = 30 mA, ƒ = 450 MHz 28 26 Gain 24 22 20 18 16 14 31 Efficiency 33 35 37 39 Output Power (dBm) 41 90 80 70 60 50 40 30 3-1 20 43 Features.
Unmatched input and output.
Integrated ESD protecti.

Part Number	Description
PTVA035002EV	Thermally-Enhanced High Power RF LDMOS FET
PTVA042502EC	Thermally-Enhanced High Power RF LDMOS FET
PTVA042502FC	Thermally-Enhanced High Power RF LDMOS FET
PTVA047002EV	Thermally-Enhanced High Power RF LDMOS FET
PTVA093002TC	Thermally-Enhanced High Power RF LDMOS FET
PTVA101K02EV	Thermally-Enhanced High Power RF LDMOS FET
PTVA104501EH	Thermally-Enhanced High Power RF LDMOS FET
PTVA120251EA	Thermally-Enhanced High Power RF LDMOS FET
PTVA120501EA	Thermally-Enhanced High Power RF LDMOS FET
PTVA123501EC	Thermally-Enhanced High Power RF LDMOS FETs