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PTVA035002EV Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450.

General Description

The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band.

Key Features

  • include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Pulsed CW Performance 450 MHz, VD = 50 V, IDQ = 0.5 A, 12 µsec pulse width, 10% duty cycle 22 85 20 Gain 18 75 65 16 55 14 Efficiency 12 45 35 10 48 a035002 gr 1 25 50 52 54 56 58 60 Output Power (dBm) Features.

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