PTVA035002EV - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Part number	PTVA035002EV
Manufacturer	Infineon
File Size	366.93 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA035002EV Datasheet
Additional preview pages of the PTVA035002EV datasheet.

The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band.

include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Pulsed CW Performance 450 MHz, VD = 50 V, IDQ = 0.5 A, 12 µsec pulse width, 10% duty cycle 22 85 20 Gain 18 75 65 16 55 14 Efficiency 12 45 35 10 48 a035002 gr 1 25 50 52 54 56 58 60 Output Power (dBm) Features.

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Published: Nov 27, 2016 |