Datasheet Summary
Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390
- 450 MHz
Description
The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA035002EV Package H-36275-4
Gain (dB) Drain Efficiency (%)
Pulsed CW Performance 450 MHz, VD = 50 V, IDQ = 0.5 A, 12 µsec pulse width, 10% duty cycle
22 85
20 Gain
75 65
16 55
14 Efficiency
45 35
10 48 a035002 gr 1
50 52 54 56 58 60
Output...