Description
The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.
Features
- include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA047002EV Package H-36275-4
Drain Efficiency (%), Gain (dB)
DVB-T Performance Drain Efficiency, Gain vs Frequency VDD= 50 V, IDQ = 1.2 A, POUT = 135 W avg
34
30 Drain Efficiency
26
22
18 Gain
14
ptva047002ev_g5
450 500 550 600 650 700 750 800 850
Frequency (MHz)
Features.
- I.
PTVA047002EV Datasheet
