Datasheet Summary
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470
- 806 MHz
Description
The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA047002EV Package H-36275-4
Drain Efficiency (%), Gain (dB)
DVB-T Performance Drain Efficiency, Gain vs Frequency VDD= 50 V, IDQ = 1.2 A, POUT = 135 W avg
30 Drain Efficiency
18 Gain
14 ptva047002ev_g5
450 500 550 600 650 700 750 800 850
Frequency...