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PTVA093002TC - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTVA093002TC is a 300-watt LDMOS FET.

Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration.

Key Features

  • dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA093002TC Package H-49248H-4, formed leads Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier 3GPP WCDMA VDD = 50 V, IDQ = 400 mA, ƒ = 758 MHz 3.84 MHz bandwidth, 10 dB PAR 24 20 Gain 16 Efficiency 60 40 20 12 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25 a093002tc-gr1a -60.

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Datasheet Details

Part number PTVA093002TC
Manufacturer Infineon
File Size 203.67 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTVA093002TC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA093002TC Package H-49248H-4, formed leads Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier 3GPP WCDMA VDD = 50 V, IDQ = 400 mA, ƒ = 758 MHz 3.84 MHz bandwidth, 10 dB PAR 24 20 Gain 16 Efficiency 60 40 20 12 0 8 PAR @ 0.