PTVA101K02EV - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Part number	PTVA101K02EV
Manufacturer	Infineon
File Size	423.74 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA101K02EV Datasheet
Additional preview pages of the PTVA101K02EV datasheet.

The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band.

include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA101K02EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz 26 128µs, 10% 22 128µs, 1% MODE-S 18 60 50 40 14 Gain 10 30 20 6 10 Efficiency 2 a101k02ev_1-1 0 30 35 40 45 50 55 60 65 Pout (dBm) Features.

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Published: Nov 27, 2016 |