PTVA104501EH - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Part number	PTVA104501EH
Manufacturer	Infineon
File Size	305.04 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA104501EH Datasheet
Additional preview pages of the PTVA104501EH datasheet.

The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band.

include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA104501EH Package H-33288-2 POUT (dBm) Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 µs pulse width, 10% duty cycle 65 Output power Efficiency 55 65 55 45 45 35 960 MHz 35 1030 Mhz 25 1090 MHz 25 1150 MHz 1215 MHz 15 a104501eh_g1 15 28 30 32 3.

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Published: Nov 27, 2016 |