Description
The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band.
Features
- include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA104501EH Package H-33288-2
POUT (dBm) Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,
128 µs pulse width, 10% duty cycle
65
Output power Efficiency
55
65 55
45 45
35
960 MHz
35
1030 Mhz
25 1090 MHz 25
1150 MHz
1215 MHz
15
a104501eh_g1
15
28 30 32 3.
PTVA104501EH Datasheet
