Datasheet Details
| Part number | PTVA104501EH |
|---|---|
| Manufacturer | Infineon |
| File Size | 305.04 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTVA104501EH Datasheet
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General Description
The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band.
Key Features
- include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA104501EH Package H-33288-2 POUT (dBm) Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 µs pulse width, 10% duty cycle 65 Output power Efficiency 55 65 55 45 45 35 960 MHz 35 1030 Mhz 25 1090 MHz 25 1150 MHz 1215 MHz 15 a104501eh_g1 15 28 30 32 3.