Datasheet4U Logo Datasheet4U.com

PTVA104501EH Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215.

General Description

The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band.

Key Features

  • include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA104501EH Package H-33288-2 POUT (dBm) Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 µs pulse width, 10% duty cycle 65 Output power Efficiency 55 65 55 45 45 35 960 MHz 35 1030 Mhz 25 1090 MHz 25 1150 MHz 1215 MHz 15 a104501eh_g1 15 28 30 32 3.

More Datasheets from Infineon

Part Number Description
PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET
PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET
PTVA120501EA Thermally-Enhanced High Power RF LDMOS FET
PTVA123501EC Thermally-Enhanced High Power RF LDMOS FETs
PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs
PTVA127002EV Thermally-Enhanced High Power RF LDMOS FET
PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET
PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET
PTVA042502EC Thermally-Enhanced High Power RF LDMOS FET
PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET

PTVA104501EH Distributor