PTVA127002EV Datasheet (Infineon)

Part PTVA127002EV
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 518.11 KB
Pricing from 588.24 USD, available from Rochester Electronics and Component Stockers USA.
Infineon

PTVA127002EV Overview

Key Specifications

Description

The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.

Key Features

  • Broadband input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Low - Excellent ruggedness
  • Pb-free and RoHS compliant

Price & Availability

Seller Inventory Price Breaks Buy
Rochester Electronics 20 1+ : 588.24 USD
25+ : 570.59 USD
100+ : 552.95 USD
500+ : 535.3 USD
View Offer
Component Stockers USA 40 1+ : 700.03 USD
10+ : 700.03 USD
View Offer