PTVA127002EV - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Part number	PTVA127002EV
Manufacturer	Infineon
File Size	518.11 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA127002EV Datasheet
Additional preview pages of the PTVA127002EV datasheet.

The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band.

include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA127002EV Package H-36275-4 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 300 µs pulse width, 12% duty cycle 65 Output Power 55 65 55 45 45 35 35 25 1200 MHz 25 Efficiency 1300 MHz 15 1400 MHz a127002ev_g1-1 15 30 32 34 36 38 40 42.

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Published: Jan 26, 2016 |