Description
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band.
Features
- include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA127002EV Package H-36275-4
POUT (dBm) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
65
Output Power
55
65 55
45 45
35 35
25 1200 MHz 25
Efficiency
1300 MHz
15
1400 MHz
a127002ev_g1-1
15
30 32 34 36 38 40 42.
PTVA127002EV Datasheet
