PXAC180602MD
Description
The PXAC180602MD is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC180602MD Package PG-HB1DSO-4-1
Peak/Average Ratio, Gain (d B) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 80 m A, ƒ = 1880 MHz
3GPP WCDMA signal,
PAR = 10 d B, 3.84 MHz BW
Efficiency
75 50
Gain
12 0
PAR @ 0.01% CCDF
-25 -50
0 27 pxac180602md_g1
-75
31 35 39 43 47
Average Output Power (d Bm)
Features
- Broadband internal input and output matching
- Asymmetric Doherty design
- Main : P1d B = 20 W Typ
- Peak : P1d B = 40 W Typ
- Typical Pulsed CW performance, 1880 MHz, 28 V, 160 µs pulse width, 10% duty...
