Datasheet4U Logo Datasheet4U.com

PXAC180602MD - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXAC180602MD is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Key Features

  • include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC180602MD Package PG-HB1DSO-4-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 Efficiency 20 75 50 16 Gain 25 12 0 8 PAR @ 0.01% CCDF 4 -2.

📥 Download Datasheet

Datasheet Details

Part number PXAC180602MD
Manufacturer Infineon
File Size 393.19 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC180602MD Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PXAC200902FC Thermally-Enhanced High Power RF LDMOS FET Wolfspeed
PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET Wolfspeed
PXAC210552FC Thermally-Enhanced High Power RF LDMOS FET Wolfspeed
PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET Wolfspeed
PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET Wolfspeed

Other Datasheets by Infineon

Part Number Description
PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET
PXAC182908FV Thermally-Enhanced High Power RF LDMOS FET
PXAC192908FV Thermally-Enhanced High Power RF LDMOS FET
PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET
PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PXAC180602MD Thermally-Enhanced High Power RF LDMOS FET 60 W, 28 V, 1805 – 1880 MHz Description The PXAC180602MD is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC180602MD Package PG-HB1DSO-4-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 Efficiency 20 75 50 16 Gain 25 12 0 8 PAR @ 0.