Description
The PXAC180602MD is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features
- include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC180602MD Package PG-HB1DSO-4-1
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
24
Efficiency
20
75 50
16
Gain
25
12 0
8
PAR @ 0.01% CCDF
4
-2.
PXAC180602MD Datasheet
