PXAC182002FC
Description
The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC182002FC Package H-37248-4
Peak/Average Ratio, Gain (d B) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 400 m A, ƒ = 1880 MHz,
3GPP WCDMA signal,
PAR = 10 d B, 3.84 MHz BW
Efficiency
60 40
16 20
Gain
12 0
8 PAR @ 0.01% CCDF 4
-20 -40
0 25 c182002fc_g1
-60
30 35 40 45 50 55
Average Output Power (d Bm)
Features
- Broadband internal input and output matching
- Asymmetrical Doherty design
- Main: 70 W Typ (P1d B)
-...
