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PXAC182002FC Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880.

General Description

The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Key Features

  • include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC182002FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 Efficiency 20 60 40 16 20 Gain 12 0 8 PAR @ 0.01% CCDF.

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