PXAC182908FV
Description
The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC182908FV Package H-37275G-6/2
Peak/Average Ratio, Gain (d B) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 m A, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 10 d B, 3.84 MHz BW
24 60
Efficiency
20 40
16 20
Gain
12 0
8 PAR @ 0.01% CCDF 4
-20 -40
0 25 pxac182908fc_g1
-60
30 35 40 45 50 55
Average Output Power (d Bm)
Features
- Broadband internal input and output matching
- Asymmetrical Doherty design
- Main : P1d B = 120 W Typ
- Peak : P1d B = 220 W Typ
- Typical Pulsed CW performance, 1842.5 MHz, 28 V, bined outputs...
