Description
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band.
Features
- include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC192908FV Package H-37275G-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW
24 60
20 Efficiency
40
16 20
12
Gain
0
8 PAR @ 0.01% CCDF 4
-20 -40
0 25
c1.
PXAC192908FV Datasheet
