PXAC192908FV
Description
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC192908FV Package H-37275G-6/2
Peak/Average Ratio, Gain (d B) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 m A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 10 d B, 3.84 MHz BW
24 60
20 Efficiency
16 20
Gain
8 PAR @ 0.01% CCDF 4
-20 -40
0 25 c192908fc_g1
-60
30 35 40 45 50 55
Average Output Power (d Bm)
Features
- Broadband internal input and output matching
- Asymmetric Doherty design
- Main: P1d B = 120 W Typ
- Peak: P1d B = 220 W...
