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PXAC192908FV - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band.

Key Features

  • include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC192908FV Package H-37275G-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 20 Efficiency 40 16 20 12 Gain 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25 c1.

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Datasheet Details

Part number PXAC192908FV
Manufacturer Infineon
File Size 331.60 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC192908FV Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PXAC192908FV Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz Description The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC192908FV Package H-37275G-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 20 Efficiency 40 16 20 12 Gain 0 8 PAR @ 0.