PXAC201202FC Datasheet (Infineon)

Part PXAC201202FC
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 399.56 KB
Infineon

PXAC201202FC Overview

Key Specifications

Description

The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs.

Key Features

  • Broadband internal matching
  • Asymmetric Doherty design
  • Main: P1dB = 35 W Typ

Price & Availability

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