PXAC201202FC
PXAC201202FC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800
- 2200 MHz
Description
The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It Features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC201202FC Package H-37248-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1805 MHz
3.84...
