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PXAC201602FC - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands.

Key Features

  • input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201602FC Package H-37248-4 Gain (dB), Peak/Average Ratio Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz 3GPP WCDMA signal: 10 dB PAR, 3.84 MHz BW 24 60 20 Efficiency 40 16 Gain 20 12 8 PAR @ 0.01% CCDF 0 -20 4 -40 0 25 30 35 40 45 Avera.

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Datasheet Details

Part number PXAC201602FC
Manufacturer Infineon
File Size 361.53 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC201602FC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201602FC Package H-37248-4 Gain (dB), Peak/Average Ratio Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz 3GPP WCDMA signal: 10 dB PAR, 3.84 MHz BW 24 60 20 Efficiency 40 16 Gain 20 12 8 PAR @ 0.