PXAC201602FC - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Datasheet Details

Part number	PXAC201602FC
Manufacturer	Infineon
File Size	361.53 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXAC201602FC Datasheet
Additional preview pages of the PXAC201602FC datasheet.

Product details

Description

The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands.

Features

input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201602FC Package H-37248-4 Gain (dB), Peak/Average Ratio Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz 3GPP WCDMA signal: 10 dB PAR, 3.84 MHz BW 24 60 20 Efficiency 40 16 Gain 20 12 8 PAR @ 0.01% CCDF 0 -20 4 -40 0 25 30 35 40 45 Avera.

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Published: Nov 27, 2016 |