PXAC201602FC
PXAC201602FC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880
- 1920 MHz, 2010
- 2025 MHz
Description
The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It Features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC201602FC Package H-37248-4
Gain (dB), Peak/Average Ratio Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz
3GPP WCDMA signal: 10 dB PAR, 3.84 MHz...
