PXAC241702FC Datasheet (Infineon)

Part PXAC241702FC
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 350.70 KB
Infineon

PXAC241702FC Overview

Key Specifications

Description

The PXAC241702FC is a 28 V LDMOS FET with an asymm­­ etrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flange.

Key Features

  • Asymmetrical Doherty design
  • Main: P1dB = 60 W Typ
  • Peak: P1dB = 90 W Typ
  • Broadband internal input and output matching
  • Typical pulsed CW performance, 2350 M

Price & Availability

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