PXAC241702FC
PXAC241702FC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300
- 2400 MHz
Description
The PXAC241702FC is a 28 V LDMOS FET with an asymm etrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC241702FC Package H-37248-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2300 MHz
3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW...
