PXAC243502FV Datasheet (Infineon)

Part PXAC243502FV
Description High Power RF LDMOS Field Effect Transistor
Category Transistor
Manufacturer Infineon
Size 393.74 KB
Infineon

PXAC243502FV Overview

Key Specifications

Description

The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange.

Key Features

  • Asymmetric design
  • Main: 150 W P1dB
  • Peak: 200 W P1dB
  • Broadband internal matching
  • CW performance at 2350 MHz, 28 V

Price & Availability

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