PXAC243502FV
PXAC243502FV is High Power RF LDMOS Field Effect Transistor manufactured by Infineon.
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300
- 2400 MHz
Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC243502FV Package H-37275-4
Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm, 3GPP WCDMA signal, 10 dB PAR
18 Efficiency 45
16 Gain
35 25
12 15
Features
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