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PXAC243502FV

Manufacturer: Infineon

PXAC243502FV datasheet by Infineon.

PXAC243502FV datasheet preview

PXAC243502FV Datasheet Details

Part number	PXAC243502FV
Datasheet	PXAC243502FV-Infineon.pdf
File Size	393.74 KB
Manufacturer	Infineon
Description	High Power RF LDMOS Field Effect Transistor

PXAC243502FV Overview

The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band.

PXAC243502FV Key Features

Asymmetric design
Main: 150 W P1dB
Peak: 200 W P1dB
Broadband internal matching
CW performance at 2350 MHz, 28 V
Ouput power = 250 W P1dB
Efficiency = 46%
Gain = 16 dB
Integrated ESD protection
Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)

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PXAC243502FV Distributor