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PXAC260622SC - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXAC260622SC is a 75-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band.

Key Features

  • dual-path design, input and output matching, and a thermally-enhanced, surface-mount package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC260622SC Package H-37248H-4 with formed leads Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 115 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 20 Efficiency 75 50 16 25 Gain 12 0 8.

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Datasheet Details

Part number PXAC260622SC
Manufacturer Infineon
File Size 391.54 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC260622SC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PXAC260622SC Thermally-Enhanced High Power RF LDMOS FET 75 W, 28 V, 2496 – 2690 MHz Description The PXAC260622SC is a 75-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced, surface-mount package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC260622SC Package H-37248H-4 with formed leads Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 115 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 20 Efficiency 75 50 16 25 Gain 12 0 8 PAR @ 0.