PXAC261002FC Datasheet (Infineon)

Part PXAC261002FC
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 158.01 KB
Infineon

PXAC261002FC Overview

Key Specifications

Description

The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include dual-path design, high gain and a thermally-enhanced package with earless flanges.

Key Features

  • Broadband internal input and output matching
  • Asymmetric design
  • Main: P1dB = 40 W Typ
  • Peak: P1dB = 70 W Typ

Price & Availability

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