Datasheet Details
| Part number | PXAC261212FC |
|---|---|
| Manufacturer | Infineon |
| File Size | 395.17 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PXAC261212FC Datasheet
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General Description
The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band.
Key Features
- dual-path design, input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261212FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.62 V, ƒ = 2635 MHz 10 MHz carrier spacing, 8 dB PAR 3.84 MHz bandwidth 17 Efficiency 16 60 50 15 40 14 Gain 13 30 20 12 10 11 29 c261212fc-gr1.