PXAC261212FC Datasheet (Infineon)

Part PXAC261212FC
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 395.17 KB
Infineon

PXAC261212FC Overview

Key Specifications

Description

The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced package with earless flange.

Key Features

  • Broadband internal matching
  • Asymmetric design
  • Main P1dB = 50 W
  • Peak P1dB = 75 W
  • CW performance in Doherty configuration, 2635 MHz, 28 V

Price & Availability

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