PXAC261212FC
PXAC261212FC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496
- 2690 MHz
Description
The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It Features dual-path design, input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC261212FC Package H-37248-4
Gain (dB) Drain Efficiency (%)
Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.62 V, ƒ = 2635 MHz
10 MHz carrier spacing, 8 dB PAR 3.84 MHz...
