Datasheet Details
| Part number | PXFC193808SV |
|---|---|
| Manufacturer | Infineon |
| File Size | 190.68 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PXFC193808SV Datasheet
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General Description
The PXFC193808SV is a 380-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Key Features
- include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC193808SV Package H-37275G-6/2 Peak/Average (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2850 mA, ƒ = 1880 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 20 Gain 16 12 40 Efficiency 20 0 8 -20 4 PAR @ 0.01% CCDF.