PXFC212551SC - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Datasheet Details

Part number	PXFC212551SC
Manufacturer	Infineon
File Size	350.67 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXFC212551SC Datasheet
Additional preview pages of the PXFC212551SC datasheet.

Product details

Description

The PXFC212551SC is a 240-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA ƒ = 2165 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 21 20 Gain 48 40 19 32 18 Efficiency 17 24 16 16 8 15 29 pxfc212551sc_g1 0 33 37 41 45 49 53 Output P.

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Published: Feb 19, 2016 |