Infineon Technologies PZT3904
NPN Silicon Switching Transistor
| Part No. | PZT3904 |
|---|---|
| Datasheet | PZT3904 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon Switching Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Marking ZT 3904 1=B Pin Configuration 2=C 3=E 4=C Package SOT223 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 60 6 200 1.5 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 72 °C Junction temperature Storage temperature mA W °C Thermal Resistance Junction - soldering point 1) RthJS 52 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 PZT3904ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 ICBO ICEV IBEV hFE V(BR)EBO V(BR)CBO V(BR)CEO typ. max. Unit 40 60 6 - - 50 50 50 V nA Collector-emitter cutoff current VCE = 30 V, -VBE = 0.5 V Base-emitter cutoff curre...
