Infineon Technologies PZTA92
PNP Silicon High Voltage Transistor
| Part No. | PZTA92 |
|---|---|
| Datasheet | PZTA92 Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon High Voltage Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Marking PZTA 92 1=B Pin Configuration 2=C 3=E 4=C Package SOT223 Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Value 300 300 5 500 100 1.5 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature mA W °C Thermal Resistance Junction - soldering point 1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-12-2001 PZTA92ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 1...
