Infineon Technologies Q67040-S4407
Power Transistor
MAXIMUM RATINGS
Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID 4.5 2.8 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 13.5 130 0.4 4.5 ±20 ±30 50 Value SPP_B SPA Unit A 4.51) 2.81) 13.5 130 0.4 4.5 ±20 ±30 31 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=3.4, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Page 1 2003-10-02 Datasheet pdf - Final dataMAXIMUM RATINGS
Parameter Drain Source voltage slope V DS = 480 V, I D = 4.5 A, Tj = 125 °C SPP04N60C3, SPB04N60C3 SPA04N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD...