S29GL128S Datasheet | Infineon

description The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive characteristics - CMOS 3.0 V core with versatile I/O - 65 nm MIRRORBIT™ Eclipse technology - Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) - Versatile I/O feature - Wide I/O voltage range (VIO): 1.65 V to VCC - ×16 data bus - Asynchronous 32-byte page read - 512-byte programming buffer - Programming in page multiples, up to a maximum of 512 bytes - Single word and multiple program on same word options - Automatic error checking and correction (ECC) - internal hardware ECC with single bit error correction - Sector erase - Uniform 128-kbyte sectors - Suspend and resume mands for program and erase operations - Status register, data polling, and ready/busy pin methods to determine device status - Advanced sector protection (ASP) - Volatile and non-volatile protection methods for each sector - Separate 1024-byte one time program (OTP) array with two lockable regions - mon flash interface (CFI) parameter table - Temperature range / grade - Industrial (- 40°C to +85°C) - Industrial plus(- 40°C to +105°C) - Automotive, AEC-Q100 grade 3 (- 40°C to +85°C) - Automotive, AEC-Q100 grade 2 (- 40°C to +105°C) - 100,000 program / erase cycles - 20 years data retention Datasheet .infineon. Please read the Important Notice and Warnings at the end of this document page 1 001-98285 Rev. - U 2024-06-25 128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ flash Parallel, 3.0 V Performance summary - Packaging...