S70GL02GS
Description
The S70GL02GS 2-Gb MIRRORBIT™ flash memory device is fabricated on 65-nm MIRRORBIT™ process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns.
Key Features
- CMOS 3.0 V core with Versatile I/O™
- Two 1024 Megabit (S29GL01GS) in a single 64-ball Fortified-BGA package (see S29GL01GS datasheet for full specifications)
- 65-nm MIRRORBIT™ process technology
- Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
- Versatile I/O feature - Wide I/O voltage (VIO): 1.65 V to VCC
- ×16 data bus
- 16-word/32-byte page read buffer
- 512-byte programming buffer - Programming in page multiples, up to a maximum of 512 bytes
- Sector erase - Uniform 128-KB sectors - S70GL02GS: two thousand forty-eight sectors
- Suspend and Resume commands for Program and Erase operations
