S70GL02GS Datasheet | Infineon

2 Gbit (256 MB) GL-S MIRRORBIT™ Flash Parallel, 3.0 V General description The S70GL02GS 2-Gb MIRRORBIT™ flash memory device is fabricated on 65-nm MIRRORBIT™ process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It Features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption. This document contains information for the...